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| NTJD4001N Small Signal MOSFET 30 V, 250 mA, Dual N-Channel, SC-88 Features * * * * * * * * Low Gate Charge for Fast Switching Small Footprint - 30% Smaller than TSOP-6 ESD Protected Gate Pb-Free Package for Green Manufacturing (G Suffix) http://onsemi.com V(BR)DSS 30 V 1.5 W @ 2.5 V RDS(on) TYP 1.0 W @ 4.0 V 250 mA ID Max Applications Low Side Load Switch Li-Ion Battery Supplied Devices - Cell Phones, PDAs, DSC Buck Converters Level Shifts SOT-363 SC-88 (6 LEADS) MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State Steady State TA = 25 C TA = 85 C TA = 25 C t =10 s PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID Value 30 20 250 180 272 600 -55 to 150 250 260 mW Units V V mA S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View mA Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) 1. C 6 MARKING DIAGRAM mA C 1 TED Surface mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). SC-88 / SOT-363 CASE 419B STYLE 26 TE D = Device Code = Date Code PIN ASSIGNMENT 1 Source-1 Gate-1 Drain-2 Top View 6 Drain-1 Gate-2 Source-2 ORDERING INFORMATION Device NTJD4001NT1 NTJD4001NT1G Package SC-88 SC-88 (Pb-Free) Shipping 3000 Units/Reel 3000 Units/Reel (c) Semiconductor Components Industries, LLC, 2003 1 August, 2003 - Rev. 0 Publication Order Number: NTJD4001N/D NTJD4001N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 30 V VDS = 0 V, VGS = 10 V VGS = 0 V, ID = 100 A 30 56 1.0 1.0 V mV/ C A A ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) () VGS = 4.0 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 5.0 V, ID = 10 mA RG = 50 mA, 17 23 94 82 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 5.0 V, VDS = 24 V, ID = 0 1 A 0.1 VGS = 0 V, f = 1.0 MHz, VDS = 5 0 V 5.0 20 19 7.25 0.9 0.2 0.3 0.2 33 32 12 1.3 nC pF gFS VDS = 3.0 V, ID = 10 mA VGS = VDS, ID = 100 A 0.8 1.2 -3.2 1.0 1.5 80 1.5 2.5 mS 1.5 V mV/ C DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA TJ = 25C TJ = 125C 0.65 0.45 12.4 ns 0.7 V Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 8.0 A/s, IS = 10 mA 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJD4001N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 0.2 ID, DRAIN CURRENT (AMPS) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.4 0.8 1.2 1.6 1.75 V 1.5 V 2 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2V VGS = 10 V to 3 V VGS = 2.75 V 2.5 V 2.25 V TJ = 25C ID, DRAIN CURRENT (AMPS) 0.1 VDS = 5 V 0.08 0.06 TJ = 125C 0.04 25C 0.02 TJ = -55C 0 1 1.2 1.4 1.6 2 1.8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.2 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.25 VGS = 10 V 1.0 TJ = 125C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.25 Figure 2. Transfer Characteristics TJ = 25C 1.0 VGS = 4.5 V 0.75 VGS = 10 V 0.5 0.75 TJ = 25C 0.5 TJ = -55C 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 Figure 3. On-Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 10 -25 0 25 50 75 100 125 150 IDSS, LEAKAGE (nA) 1000 ID = 0.01 A VGS = 10 V 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 100 TJ = 125C 10 20 0 5 15 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTJD4001N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 50 VDS = 0 V Ciss VGS = 0 V TJ = 25C 5 QG 4 C, CAPACITANCE (pF) 40 30 Crss 3 QGS 2 QGD 20 Ciss Coss 10 Crss 0 10 5 0 5 10 15 20 25 1 0 0 ID = 0.1 A TJ = 25C 0.6 0.2 0.4 0.8 QG, TOTAL GATE CHARGE (nC) 1 VGS VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-to-Source Voltage vs. Total Gate Charge 0.1 IS, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 25C 0.08 0.06 0.04 0.02 0 0.5 0.55 0.6 0.65 0.7 0.75 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJD4001N PACKAGE DIMENSIONS A G SC-88 (SOT-363) CASE 419B-02 ISSUE R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. 4 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 6 5 S 1 2 3 -B- D 6 PL 0.2 (0.008) N M B M DIM A B C D G H J K N S J C STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 H K http://onsemi.com 5 NTJD4001N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTJD4001N/D |
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